#WeAreIn for jobs that impact everyone's life. Join the thinkers, builders, and problem-solvers behind tomorrow’s technology. As a Staff Engineer Wafer Technology & Device Development, you'll have the opportunity to merge creativity with your technical expertise by shaping the future of technology, driving groundbreaking projects, and bringing new ideas to life. Are you in?
Your role
Key responsibilities in your new role
Gallium Nitride is a real game changer for decarbonization and digitalization: converting power far more efficiently than other semiconductor materials. Joining our team, you'll design future GaN HEMT concepts hands-on, from TCAD simulation and calibration to manufacturable power products, making a real impact on energy efficiency and CO2 reduction.
Device concept engineering of future advanced GaN HEMT cell structures: explore new device architectures, layer stacks and field-management concepts for power transistors
Simulate the Figures of Merit (FoM) of GaN power transistors, such as Ron*A, Ron*Qg, Ron*Qoss etc.
Provide the first simulated electrical characteristics of new GaN HEMT concepts as the basis for developing behavioral SPICE models
Calibrate TCAD models on experimental data, using both static and dynamic measurements
Run mixed-mode simulations combining TCAD and SPICE to optimize devices for target applications such as IBC (intermediate bus converters), buck and boost converters and other power conversion topologies
Design power device products by translating simulation results into robust, manufacturable products in close collaboration with process, design, modeling, reliability and application teams
Document and present results, and give clear recommendations to technology development, product engineering and management
Your profile
Qualifications and skills to help you succeed
A master or PhD degree in Physics, Electrical Engineering, Power Electronics or a comparable technical discipline
3+ years of relevant industry or research experience in TCAD simulation, device engineering or technology development, ideally in the field of power semiconductors
Solid understanding of semiconductor device physics, with GaN and HEMT structures knowledge (2DEG formation, polarization, trapping, field plates, p-GaN gate) as a strong plus
Hands-on experience with TCAD tools (e.g. Synopsys Sentaurus, Silvaco Atlas or similar), including mixed-mode simulation and calibration against measured static and dynamic data
Scripting skills (e.g. Python, Matlab) for automation and data analysis
Knowledge of SPICE and compact modeling of power converter topologies (buck, boost, IBC) is an advantage
- A structured, analytical problem-solving approach and an ownership mindset, with the ability to work in an international, cross-functional team
- Fluent English skills; German (or motivation to learn) is an advantage
We offer competitive salaries and additional benefits based on your performance, experience and qualification. The employment is in accordance with the collective salary and wage agreement for employees of the electrical and electronics industry, employment group G (https://www.feei.at/aktuelles/mindestloehne-und-gehaelter-eei/). The monthly salary is paid 14 times p.a. We offer a higher compensation depending on your expertise and skills.
#WeAreIn for driving decarbonization and digitalization.
As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.
Are you in?
We are on a journey to create the best Infineon for everyone.
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Our hiring decisions are based on skills and experience. Even if you don’t meet every requirement, we encourage you to apply.
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Elisabeth Franz